IXFA12N50P
MOSFET N-CH 500V 12A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Polar series N-Channel Power MOSFET, part number IXFA12N50P. This surface mount device offers a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C. Key parameters include a maximum Rds On of 500mOhm at 6A and 10V, a gate charge (Qg) of 29 nC at 10V, and input capacitance (Ciss) of 1830 pF at 25V. The device supports a maximum power dissipation of 200W (Tc) and operates across a wide temperature range of -55°C to 150°C. The TO-263-3, D2PAK package facilitates efficient thermal management for demanding applications. This component is suitable for use in power supplies, motor control, and lighting applications.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 1mA |
| Supplier Device Package | TO-263AA (IXFA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1830 pF @ 25 V |
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