IXCP01N90E
MOSFET N-CH 900V 250MA TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXCP01N90E is an N-Channel Power MOSFET designed for high voltage applications. This component features a drain-source breakdown voltage (Vdss) of 900V and a continuous drain current (Id) of 250mA at 25°C (Tc). The Rds On is specified at a maximum of 80 Ohms when operating at 50mA drain current and 10V gate-source voltage. With a gate charge (Qg) of 7.5 nC at 10V and input capacitance (Ciss) of 133 pF at 25V, this MOSFET offers efficient switching characteristics. The device has a maximum power dissipation of 40W (Tc) and is housed in a TO-220-3 through-hole package. Operating temperature range is from -55°C to 150°C. This component is suitable for power supply and motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 250mA (Tc) |
| Rds On (Max) @ Id, Vgs | 80Ohm @ 50mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 25µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 133 pF @ 25 V |
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