IXYS CoolMOS™, HiPerDyn™ N-Channel Power MOSFET, part number FMD15-06KC5-PT, offers 600 V drain-source voltage and 15 A continuous drain current at 25°C (Tc). This through-hole component features a low on-resistance of 165 mOhm at 12 A and 10 V Vgs. The ISOPLUS i4-PAC™ package ensures efficient thermal management, supporting operation from -55°C to 150°C. Key parameters include a gate charge (Qg) of 52 nC at 10 V and input capacitance (Ciss) of 2000 pF at 100 V. This device is suitable for applications in power supplies, motor control, and industrial power conversion.
Additional Information
Series: CoolMOS™, HiPerDyn™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | ISOPLUSi5-Pak™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.5V @ 790µA |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
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