DS9-12F
DIODE GEN PURP 1.2KV 11A DO203AAManufacturer: IXYS
Categories: Single Diodes
Quality Control: Learn More
IXYS DS9-12F is a general-purpose diode with a maximum reverse voltage (Vr) of 1200 V and an average rectified current (Io) of 11A. This component features a standard recovery time, exceeding 500ns for currents greater than 200mA. The forward voltage (Vf) is a maximum of 1.4V at 36A, with a reverse leakage current of 3mA at 1200V. Designed for robust applications, the DS9-12F utilizes a DO-203AA (DO-4) stud mount package for effective thermal management. Its operating junction temperature range is from -40°C to 180°C. This diode is suitable for power supply rectification and general industrial power applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | DO-203AA, DO-4, Stud |
| Mounting Type | Chassis, Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 11A |
| Supplier Device Package | DO-203AA |
| Operating Temperature - Junction | -40°C ~ 180°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 36 A |
| Current - Reverse Leakage @ Vr | 3 mA @ 1200 V |
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