DCG35C1200HR
DIODE SCHOTTKY 1.2KV 18A ISO247Manufacturer: IXYS
Categories: Single Diodes
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IXYS DCG35C1200HR is a Silicon Carbide (SiC) Schottky diode designed for high-voltage applications. This component features a maximum DC reverse voltage of 1200 V and an average rectified forward current of 18 A. The forward voltage drop (Vf) is rated at 1.8 V at 20 A. Reverse leakage current is 200 µA at 1200 V, with a junction capacitance of 1.5 pF at 0V and 1MHz. This diode offers fast recovery characteristics. The device is housed in an ISO247 package for through-hole mounting and operates within a junction temperature range of -40°C to 150°C. It is suitable for use in power supplies, solar inverters, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1.5pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 18A |
| Supplier Device Package | ISO247 |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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