DCG20C1200HR
DIODE SIC 1.2KV 12.5A ISO247Manufacturer: IXYS
Categories: Single Diodes
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The IXYS DCG20C1200HR is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component features a 1200 V DC reverse voltage rating and a maximum forward voltage of 1.8 V at 10 A. With an average rectified current capability of 12.5 A and a reverse leakage current of 250 µA at 1200 V, it offers excellent efficiency and reliability. The diode exhibits fast recovery characteristics, with a speed typically less than 500 ns for currents greater than 200 mA. Its operating junction temperature range is -40°C to 150°C. The device is housed in an ISO247 package, also known as TO-247-3, facilitating easy integration into power electronic designs. The DCG20C1200HR is suitable for use in industrial and automotive power conversion systems, electric vehicle charging, and renewable energy applications where high voltage and efficient switching are critical. Capacitance at 0V and 1MHz is specified at 755pF.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 755pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 12.5A |
| Supplier Device Package | ISO247 |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 250 µA @ 1200 V |
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