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DCG17P1200HR

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DCG17P1200HR

DIODE SCHOTTKY 1.2KV 18A ISO247

Manufacturer: IXYS

Categories: Single Diodes

Quality Control: Learn More

IXYS DCG17P1200HR is a Silicon Carbide Schottky diode designed for demanding power applications. This high-performance component offers a maximum DC reverse voltage of 1200 V and an average rectified forward current of 18 A. Featuring a low forward voltage drop of 1.8 V at 20 A, it ensures efficient power conversion. The diode's fast recovery characteristic, less than 500 ns for forward currents greater than 200 mA, minimizes switching losses. With a junction operating temperature range of -40°C to 150°C and a reverse leakage current of 200 µA at 1200 V, it provides robust performance in challenging environments. The component is housed in an ISO247 package, facilitating through-hole mounting. This device is commonly utilized in industrial motor drives, electric vehicle charging, and solar inverters where high voltage and efficiency are critical.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F1500pF @ 0V, 1MHz
Current - Average Rectified (Io)18A
Supplier Device PackageISO247
Operating Temperature - Junction-40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 20 A
Current - Reverse Leakage @ Vr200 µA @ 1200 V

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