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MKI50-12E7

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MKI50-12E7

IGBT MODULE 1200V 90A 350W E2

Manufacturer: IXYS

Categories: IGBT Modules

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The IXYS MKI50-12E7 is a high-performance NPT IGBT module featuring a full bridge inverter configuration. This module is rated for a collector-emitter breakdown voltage of 1200 V and a continuous collector current (Ic) of 90 A, with a maximum power dissipation of 350 W. Key electrical characteristics include a Vce(on) of 2.4 V at 15 V gate-emitter voltage and 50 A collector current, and an input capacitance (Cies) of 3.8 nF at 25 V. Designed for chassis mounting, it operates within an ambient temperature range of -40°C to 125°C. The MKI50-12E7 is commonly utilized in industrial automation, motor drives, and power supply applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Box
Technical Details:
PackagingBox
Package / CaseE2
Mounting TypeChassis Mount
InputStandard
ConfigurationFull Bridge Inverter
Operating Temperature-40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 50A
NTC ThermistorNo
Supplier Device PackageE2
IGBT TypeNPT
Current - Collector (Ic) (Max)90 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max350 W
Current - Collector Cutoff (Max)800 µA
Input Capacitance (Cies) @ Vce3.8 nF @ 25 V

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