Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

MKI100-12F8

Banner
productimage

MKI100-12F8

IGBT MODULE 1200V 125A 640W E3

Manufacturer: IXYS

Categories: IGBT Modules

Quality Control: Learn More

The IXYS MKI100-12F8 is an IGBT Module featuring an NPT Full Bridge Inverter configuration. This component is rated for a maximum collector-emitter voltage of 1200 V and a continuous collector current of 125 A. It offers a maximum power dissipation of 640 W and a Vce(on) of 3.9V at 15V gate-emitter voltage and 100A collector current. The module has an input capacitance (Cies) of 6.5 nF at 25 V and an operating temperature range of -40°C to 125°C. Designed for chassis mounting, this module is suitable for applications in industrial power supplies, motor drives, and renewable energy systems. The IXYS MKI100-12F8 is provided in an E3 package.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Box
Technical Details:
PackagingBox
Package / CaseE3
Mounting TypeChassis Mount
InputStandard
ConfigurationFull Bridge Inverter
Operating Temperature-40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 100A
NTC ThermistorNo
Supplier Device PackageE3
IGBT TypeNPT
Current - Collector (Ic) (Max)125 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max640 W
Current - Collector Cutoff (Max)1.3 mA
Input Capacitance (Cies) @ Vce6.5 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
VKI50-12P1

IGBT MOD 1200V 49A 208W ECO-PAC2

product image
MII145-12A3

IGBT MODULE 1200V 160A 700W Y4M5

product image
MWI25-12A7

IGBT MODULE 1200V 50A 225W E2