MII75-12A3
IGBT MODULE 1200V 90A 370W Y4M5Manufacturer: IXYS
Categories: IGBT Modules
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IXYS MII75-12A3 is an NPT IGBT module featuring a half-bridge configuration. This module is rated for 1200 V collector-emitter breakdown voltage and can handle a continuous collector current of 90 A at a maximum power dissipation of 370 W. The Vce(on) is specified at 2.7 V maximum for a gate-emitter voltage of 15 V and a collector current of 50 A. Input capacitance (Cies) is 3.3 nF at 25 V. The module is designed for chassis mounting and operates within a temperature range of -40°C to 150°C. It is suitable for applications in industrial power supplies, motor drives, and renewable energy systems. The package type is Y4-M5.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | Y4-M5 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
| NTC Thermistor | No |
| Supplier Device Package | Y4-M5 |
| IGBT Type | NPT |
| Current - Collector (Ic) (Max) | 90 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 370 W |
| Current - Collector Cutoff (Max) | 4 mA |
| Input Capacitance (Cies) @ Vce | 3.3 nF @ 25 V |
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