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MII300-12A4

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MII300-12A4

IGBT MOD 1200V 330A 1380W Y3DCB

Manufacturer: IXYS

Categories: IGBT Modules

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IXYS MII300-12A4 is an NPT IGBT module configured as a half bridge. This component offers a 1200 V collector-emitter breakdown voltage and a maximum collector current of 330 A. The on-state voltage (Vce(on)) is specified at 2.7 V at a gate-emitter voltage of 15 V and a collector current of 200 A. It features a maximum power dissipation of 1380 W and an input capacitance (Cies) of 13 nF at 25 V. The module is designed for chassis mounting and utilizes the Y3-DCB package. The operating temperature range is from -40°C to 150°C (TJ). This device is suitable for applications in industrial motor drives and power conversion systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Box
Technical Details:
PackagingBox
Package / CaseY3-DCB
Mounting TypeChassis Mount
InputStandard
ConfigurationHalf Bridge
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 200A
NTC ThermistorNo
Supplier Device PackageY3-DCB
IGBT TypeNPT
Current - Collector (Ic) (Max)330 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max1380 W
Current - Collector Cutoff (Max)13 mA
Input Capacitance (Cies) @ Vce13 nF @ 25 V

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