MII200-12A4
IGBT MOD 1200V 270A 1130W Y3DCBManufacturer: IXYS
Categories: IGBT Modules
Quality Control: Learn More
The IXYS MII200-12A4 is an NPT Half Bridge IGBT module designed for high-power applications. Featuring a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 270 A, this component is rated for 1130 W maximum power dissipation. The module exhibits a typical on-state voltage of 2.7V at 15V gate-emitter voltage and 150A collector current. With a 11 nF input capacitance at 25V, it is suitable for applications requiring efficient switching. The Y3-DCB package with chassis mounting facilitates thermal management. This device finds application in industrial motor drives and power factor correction systems. The operating junction temperature is specified up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | Y3-DCB |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 150A |
| NTC Thermistor | No |
| Supplier Device Package | Y3-DCB |
| IGBT Type | NPT |
| Current - Collector (Ic) (Max) | 270 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 1130 W |
| Current - Collector Cutoff (Max) | 10 mA |
| Input Capacitance (Cies) @ Vce | 11 nF @ 25 V |
Request a Quote
Clients Also Buy
MWI25-12A7
IGBT MODULE 1200V 50A 225W E2
MID150-12A4
IGBT MOD 1200V 180A 760W Y3DCB
IXSN52N60AU1
IGBT MOD 600V 80A 250W SOT227B