MII150-12A4
IGBT MOD 1200V 180A 760W Y3DCBManufacturer: IXYS
Categories: IGBT Modules
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The IXYS MII150-12A4 is an NPT IGBT Module configured as a Half Bridge. This module features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 180A. With a maximum power dissipation of 760W, it is designed for demanding applications. The Vce(on) is rated at 2.7V at 15V Vge and 100A Ic. Input capacitance (Cies) is 6.6 nF at 25V. The module utilizes a Y3-DCB package suitable for chassis mounting. The operating junction temperature can reach 150°C. This component is commonly found in industrial motor drives, power supplies, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | Y3-DCB |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 100A |
| NTC Thermistor | No |
| Supplier Device Package | Y3-DCB |
| IGBT Type | NPT |
| Current - Collector (Ic) (Max) | 180 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 760 W |
| Current - Collector Cutoff (Max) | 7.5 mA |
| Input Capacitance (Cies) @ Vce | 6.6 nF @ 25 V |
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