MII100-12A3
IGBT MODULE 1200V 135A 560W Y4M5Manufacturer: IXYS
Categories: IGBT Modules
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IXYS MII100-12A3 is a NPT IGBT module configured as a half bridge. This chassis-mount component offers a collector-emitter breakdown voltage of 1200 V and a continuous collector current (Ic) rating of 135 A. The module dissipates a maximum power of 560 W, with a typical on-state voltage (Vce(on)) of 2.7 V at 15 V Vge and 75 A Ic. Input capacitance (Cies) is specified at 5.5 nF at 25 V. The operating temperature range is -40°C to 150°C (TJ). This device is suitable for applications in industrial motor drives and power generation. It is supplied in a Y4-M5 package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Y4-M5 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 75A |
| NTC Thermistor | No |
| Supplier Device Package | Y4-M5 |
| IGBT Type | NPT |
| Current - Collector (Ic) (Max) | 135 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 560 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 5.5 nF @ 25 V |
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