Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

MIEB101H1200EH

Banner
productimage

MIEB101H1200EH

IGBT MODULE 1200V 183A 630W E3

Manufacturer: IXYS

Categories: IGBT Modules

Quality Control: Learn More

The IXYS MIEB101H1200EH is a high-performance IGBT module featuring a full bridge inverter configuration. This component offers a robust 1200V collector-emitter breakdown voltage and a maximum continuous collector current of 183A. With a power dissipation of 630W, it is designed for demanding applications where efficient power handling is critical. The module exhibits a typical Vce(on) of 2.2V at 15V gate-emitter voltage and 100A collector current, indicating low conduction losses. Input capacitance (Cies) is specified at 7.43 nF at 25V. Operating across a temperature range of -40°C to 125°C (TJ), the MIEB101H1200EH is suitable for chassis mounting and is packaged in the E3 case. This module finds application in industrial motor drives, electric vehicle powertrains, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 73 week(s)Product Status: Last Time BuyPackaging: Box
Technical Details:
PackagingBox
Package / CaseE3
Mounting TypeChassis Mount
InputStandard
ConfigurationFull Bridge Inverter
Operating Temperature-40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 100A
NTC ThermistorNo
Supplier Device PackageE3
IGBT Type-
Current - Collector (Ic) (Max)183 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max630 W
Current - Collector Cutoff (Max)300 µA
Input Capacitance (Cies) @ Vce7.43 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
VKI50-12P1

IGBT MOD 1200V 49A 208W ECO-PAC2

product image
MII145-12A3

IGBT MODULE 1200V 160A 700W Y4M5

product image
MWI25-12A7

IGBT MODULE 1200V 50A 225W E2