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IXYN100N65B3D1

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IXYN100N65B3D1

DISC IGBT XPT-GENX3 SOT-227UI(MI

Manufacturer: IXYS

Categories: IGBT Modules

Quality Control: Learn More

The IXYS IXYN100N65B3D1 from the XPT™, GenX3™ series is a single PT IGBT module. This component features a 650 V collector-emitter breakdown voltage and a maximum collector current of 185 A. The Vce(on) is specified at 1.85V @ 15V, 70A, with a typical input capacitance (Cies) of 4.74 nF @ 25 V. The module supports a maximum power dissipation of 600 W and is designed for chassis mounting within the SOT-227B package. Operating temperatures range from -55°C to 175°C (TJ). This device is commonly deployed in power conversion systems, industrial motor drives, and renewable energy applications.

Additional Information

Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 70A
NTC ThermistorNo
Supplier Device PackageSOT-227B
IGBT TypePT
Current - Collector (Ic) (Max)185 A
Voltage - Collector Emitter Breakdown (Max)650 V
Power - Max600 W
Current - Collector Cutoff (Max)50 µA
Input Capacitance (Cies) @ Vce4.74 nF @ 25 V

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