IXXN110N65C4H1
IGBT MOD 650V 210A 750W SOT227BManufacturer: IXYS
Categories: IGBT Modules
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IXYS XPT™, GenX4™ IXXN110N65C4H1 is a PT IGBT module featuring a 650V collector-emitter breakdown voltage and a maximum continuous collector current of 210A. This single configuration module offers a maximum power dissipation of 750W and a low Vce(on) of 2.35V at 15V Vge and 110A Ic. The input capacitance (Cies) is 3.69 nF at 25V. Designed for robust performance, it operates across a wide temperature range from -55°C to 175°C (TJ). The module is housed in a SOT-227B (miniBLOC) package with a chassis mount for efficient thermal management. Applications include high-power switching systems and industrial motor drives.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 110A |
| NTC Thermistor | No |
| Supplier Device Package | SOT-227B |
| IGBT Type | PT |
| Current - Collector (Ic) (Max) | 210 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Power - Max | 750 W |
| Current - Collector Cutoff (Max) | 50 µA |
| Input Capacitance (Cies) @ Vce | 3.69 nF @ 25 V |
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