IXXN110N65B4H1
IGBT MOD 650V 215A 750W SOT227BManufacturer: IXYS
Categories: IGBT Modules
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The IXYS IXXN110N65B4H1 is a single PT IGBT module from the XPT™, GenX4™ series. This SOT-227B packaged component offers a 650 V collector-emitter breakdown voltage and a maximum collector current of 215 A. It features a low Vce(on) of 2.1 V at 15 V Vge and 110 A Ic, with a maximum power dissipation of 750 W. The module has an input capacitance (Cies) of 3.65 nF at 25 V. Designed for chassis mounting, it operates within a temperature range of -55°C to 175°C. This device is suitable for applications in power conversion and industrial motor drives.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 110A |
| NTC Thermistor | No |
| Supplier Device Package | SOT-227B |
| IGBT Type | PT |
| Current - Collector (Ic) (Max) | 215 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Power - Max | 750 W |
| Current - Collector Cutoff (Max) | 50 µA |
| Input Capacitance (Cies) @ Vce | 3.65 nF @ 25 V |
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