Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

IXSN80N60BD1

Banner
productimage

IXSN80N60BD1

IGBT MOD 600V 160A 420W SOT227B

Manufacturer: IXYS

Categories: IGBT Modules

Quality Control: Learn More

The IXYS IXSN80N60BD1 is a SOT-227B packaged IGBT module designed for high-power applications. This single IGBT configuration offers a 600V collector-emitter breakdown voltage and a maximum continuous collector current of 160A. With a maximum power dissipation of 420W and a low on-state voltage of 2.5V at 15V gate-emitter voltage and 80A collector current, it ensures efficient operation. The input capacitance (Cies) is 6.6 nF at 25V. This module features chassis mounting for robust thermal management and operates across a wide temperature range of -55°C to 150°C. It finds application in industries such as industrial motor drives and power supplies.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 80A
NTC ThermistorNo
Supplier Device PackageSOT-227B
IGBT Type-
Current - Collector (Ic) (Max)160 A
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max420 W
Current - Collector Cutoff (Max)200 µA
Input Capacitance (Cies) @ Vce6.6 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MWI25-12A7

IGBT MODULE 1200V 50A 225W E2

product image
MID150-12A4

IGBT MOD 1200V 180A 760W Y3DCB

product image
IXSN52N60AU1

IGBT MOD 600V 80A 250W SOT227B