IXSN35N100U1
IGBT MOD 1000V 38A 205W SOT227BManufacturer: IXYS
Categories: IGBT Modules
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The IXYS IXSN35N100U1 is a single IGBT module designed for high-power switching applications. It features a 1000 V collector-emitter breakdown voltage and a maximum continuous collector current of 38 A. The module offers a low on-state voltage of 3.5 V at 15 V gate-emitter voltage and 25 A collector current, contributing to efficient operation. With a maximum power dissipation of 205 W and a low input capacitance of 4.5 nF at 25 V, this component is well-suited for demanding environments.
This IXYS IGBT module is housed in a SOT-227B (miniBLOC) package with a chassis mount for robust thermal management. Its operating temperature range is from -40°C to 150°C (TJ). The IXSN35N100U1 finds application in various industrial sectors, including power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 25A |
| NTC Thermistor | No |
| Supplier Device Package | SOT-227B |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 38 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Power - Max | 205 W |
| Current - Collector Cutoff (Max) | 750 µA |
| Input Capacitance (Cies) @ Vce | 4.5 nF @ 25 V |
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