Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

IXGN82N120C3H1

Banner
productimage

IXGN82N120C3H1

IGBT MOD 1200V 130A 595W SOT227B

Manufacturer: IXYS

Categories: IGBT Modules

Quality Control: Learn More

This IXYS GenX3™ IGBT module, part number IXGN82N120C3H1, offers a single PT IGBT configuration with a maximum collector-emitter voltage of 1200 V. It features a high continuous collector current capability of 130 A and a maximum power dissipation of 595 W. The module exhibits a typical Vce(on) of 3.9 V at 15 V Vge and 82 A, with low input capacitance of 7.9 nF at 25 V. Designed for robust operation, it is rated for an extended operating temperature range of -55°C to 150°C (TJ). The SOT-227B package facilitates efficient chassis mounting. This component is suitable for applications in industrial motor drives, power supplies, and renewable energy systems.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 82A
NTC ThermistorNo
Supplier Device PackageSOT-227B
IGBT TypePT
Current - Collector (Ic) (Max)130 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max595 W
Current - Collector Cutoff (Max)50 µA
Input Capacitance (Cies) @ Vce7.9 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
IXGA48N60A3-TRL

IXGA48N60A3 TRL

product image
IXGK120N120A3

IGBT PT 1200V 240A TO264

product image
IXGH30N60C3D1

IGBT 600V 60A 220W TO247