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IXGN82N120B3H1

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IXGN82N120B3H1

IGBT MOD 1200V 145A 595W SOT227B

Manufacturer: IXYS

Categories: IGBT Modules

Quality Control: Learn More

IXYS GenX3™ IGBT Module IXGN82N120B3H1 offers a single PT IGBT in a SOT-227B (miniBLOC) package for chassis mounting. This module features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 145 A. The on-state voltage drop (Vce(on)) is specified at 3.2V at 15V gate-emitter voltage and 82A collector current. With a maximum power dissipation of 595 W, it is suitable for high-power applications. Input capacitance (Cies) is 7.9 nF at 25 V. The operating temperature range is -55°C to 150°C. Typical applications include industrial motor drives, power supplies, and solar inverters.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 82A
NTC ThermistorNo
Supplier Device PackageSOT-227B
IGBT TypePT
Current - Collector (Ic) (Max)145 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max595 W
Current - Collector Cutoff (Max)50 µA
Input Capacitance (Cies) @ Vce7.9 nF @ 25 V

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