IXGN60N60C2D1
IGBT MOD 600V 75A 480W SOT227BManufacturer: IXYS
Categories: IGBT Modules
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The IXYS HiPerFAST™ IGBT Module IXGN60N60C2D1 is a single-configuration, PT-type Insulated Gate Bipolar Transistor designed for high-efficiency power switching applications. This module features a 600 V collector-emitter breakdown voltage and a maximum continuous collector current of 75 A, with a power dissipation rating of 480 W. The Vce(on) is specified at 2.5V maximum at 15V Vge and 50A Ic, with an input capacitance (Cies) of 4.75 nF at 25V. Packaged in a SOT-227B (miniBLOC) case with a chassis mount, it operates across a temperature range of -55°C to 150°C. This component is suitable for use in applications such as industrial motor drives, uninterruptible power supplies (UPS), and renewable energy systems.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
| NTC Thermistor | No |
| Supplier Device Package | SOT-227B |
| IGBT Type | PT |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 480 W |
| Current - Collector Cutoff (Max) | 650 µA |
| Input Capacitance (Cies) @ Vce | 4.75 nF @ 25 V |
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