Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

IXGN200N60B3

Banner
productimage

IXGN200N60B3

IGBT MOD 600V 300A 830W SOT227B

Manufacturer: IXYS

Categories: IGBT Modules

Quality Control: Learn More

The IXYS GenX3™ series IXGN200N60B3 is a high-performance IGBT module featuring a single N-channel PT IGBT configuration. This module is rated for a collector-emitter breakdown voltage of 600V and a continuous collector current of 300A, with a maximum power dissipation of 830W. It offers a low on-state voltage of 1.5V at 15V gate-emitter voltage and 100A collector current. The input capacitance (Cies) is 26 nF at 25V. Designed for chassis mounting within a SOT-227B (miniBLOC) package, it operates across a wide temperature range of -55°C to 150°C. This component is suitable for applications in industrial power supplies, motor drives, and renewable energy systems.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic1.5V @ 15V, 100A
NTC ThermistorNo
Supplier Device PackageSOT-227B
IGBT TypePT
Current - Collector (Ic) (Max)300 A
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max830 W
Current - Collector Cutoff (Max)50 µA
Input Capacitance (Cies) @ Vce26 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
IXGA48N60A3-TRL

IXGA48N60A3 TRL

product image
IXGK120N120A3

IGBT PT 1200V 240A TO264

product image
IXGH30N60C3D1

IGBT 600V 60A 220W TO247