Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

IXEN60N120

Banner
productimage

IXEN60N120

IGBT MOD 1200V 100A 445W SOT227B

Manufacturer: IXYS

Categories: IGBT Modules

Quality Control: Learn More

The IXYS IXEN60N120 is a single NPT trench IGBT module designed for high-power applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 100 A. With a maximum power dissipation of 445 W, the module is suitable for demanding switching applications. The Vce(on) is specified at 2.7 V maximum for a gate-emitter voltage of 15 V and a collector current of 60 A. Input capacitance (Cies) is 3.8 nF at 25 V. The IXEN60N120 utilizes a SOT-227B (miniBLOC) package for chassis mounting, facilitating efficient thermal management. Operating temperature ranges from -40°C to 150°C. This IGBT module finds application in power conversion systems, motor drives, and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 60A
NTC ThermistorNo
Supplier Device PackageSOT-227B
IGBT TypeNPT
Current - Collector (Ic) (Max)100 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max445 W
Current - Collector Cutoff (Max)800 µA
Input Capacitance (Cies) @ Vce3.8 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MIXA101W1200EH

IGBT MODULE 1200V 155A 500W E3

product image
MWI50-12A7

IGBT MODULE 1200V 85A 350W E2

product image
IXGN72N60A3

IGBT MOD 600V 160A 360W SOT227B