IXBN42N170A
IGBT MOD 1700V 42A 312W SOT227BManufacturer: IXYS
Categories: IGBT Modules
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IXYS IXBN42N170A BIMOSFET™ module, a single IGBT configuration, offers a robust solution for high-voltage applications. Rated at 1700 V with a continuous collector current of 42 A, this device features a maximum power dissipation of 312 W. The low on-state voltage of 6 V at 15 V gate-emitter voltage and 21 A collector current, coupled with an input capacitance of 3.5 nF at 25 V, ensures efficient power switching. Designed for chassis mounting within the SOT-227B (miniBLOC) package, it operates across a wide temperature range of -55°C to 150°C. This component is suitable for demanding sectors such as industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 21A |
| NTC Thermistor | No |
| Supplier Device Package | SOT-227B |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 42 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Power - Max | 312 W |
| Current - Collector Cutoff (Max) | 50 µA |
| Input Capacitance (Cies) @ Vce | 3.5 nF @ 25 V |
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