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MMIX4B22N300

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MMIX4B22N300

IGBT TRANS 3000V 38A

Manufacturer: IXYS

Categories: IGBT Arrays

Quality Control: Learn More

IXYS BIMOSFET™ MMIX4B22N300 is a high-performance IGBT array, configured as a Full Bridge. This surface mount component offers a substantial collector-emitter breakdown voltage of 3000 V and a continuous collector current capability of 38 A. With a maximum power dissipation of 150 W, it is suitable for demanding applications. The device features a Vce(on) of 2.7V at 15V Vge and 22A, and an input capacitance (Cies) of 2.2 nF at 25V. The operating temperature range is -55°C to 150°C (TJ). Packaged in a 24-SMPD module, this component is commonly utilized in high-voltage power conversion systems, industrial motor drives, and renewable energy applications.

Additional Information

Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case24-SMD Module, 9 Leads
Mounting TypeSurface Mount
InputStandard
ConfigurationFull Bridge
Operating Temperature-55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 22A
NTC ThermistorNo
Supplier Device Package24-SMPD
IGBT Type-
Current - Collector (Ic) (Max)38 A
Voltage - Collector Emitter Breakdown (Max)3000 V
Power - Max150 W
Current - Collector Cutoff (Max)35 µA
Input Capacitance (Cies) @ Vce2.2 nF @ 25 V

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