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MMIX4B20N300

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MMIX4B20N300

IGBT F BRIDGE 3000V 34A 24SMPD

Manufacturer: IXYS

Categories: IGBT Arrays

Quality Control: Learn More

IXYS MMIX4B20N300, a BIMOSFET™ IGBT Array, features a full bridge configuration designed for high-voltage applications. This component offers a robust 3000V collector-emitter breakdown voltage and a continuous collector current of 34A. With a maximum power dissipation of 150W and a Vce(on) specification of 3.2V at 15V gate-source voltage and 20A collector current, it is engineered for demanding power switching tasks. The device operates reliably across a wide temperature range from -55°C to 150°C (TJ). Its 24-SMPD surface mount package, with 9 leads, is suitable for high-density power solutions. Applications include industrial motor drives, power supplies, and electric vehicle powertrains.

Additional Information

Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case24-SMD Module, 9 Leads
Mounting TypeSurface Mount
InputStandard
ConfigurationFull Bridge
Operating Temperature-55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 20A
NTC ThermistorNo
Supplier Device Package24-SMPD
IGBT Type-
Current - Collector (Ic) (Max)34 A
Voltage - Collector Emitter Breakdown (Max)3000 V
Power - Max150 W

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