FII50-12E
IGBT H BRIDGE 1200V 50A I4PAK5Manufacturer: IXYS
Categories: IGBT Arrays
Quality Control: Learn More
IXYS FII50-12E is an NPT IGBT half-bridge array designed for high-power applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 50A, with a maximum power dissipation of 200W. The device exhibits a Vce(on) of 2.6V at 15V gate-emitter voltage and 30A collector current, and an input capacitance (Cies) of 2nF at 25V. Packaged in an ISOPLUS i4-PAC™ with a through-hole mounting type, it operates efficiently across a temperature range of -55°C to 150°C. This IGBT array is suitable for demanding industrial power conversion systems, motor drives, and power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 |
| Mounting Type | Through Hole |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 30A |
| NTC Thermistor | No |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| IGBT Type | NPT |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 200 W |
| Current - Collector Cutoff (Max) | 400 µA |
| Input Capacitance (Cies) @ Vce | 2 nF @ 25 V |
Request a Quote
Clients Also Buy
MMIX4B20N300
IGBT F BRIDGE 3000V 34A 24SMPD
MMIX4B22N300
IGBT TRANS 3000V 38A
IXA40RG1200DHG-TUB
IGBT H BRIDGE 1200V 63A SMPD