FII30-12E
IGBT H BRIDGE 1200V 33A I4PAK5Manufacturer: IXYS
Categories: IGBT Arrays
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This IXYS IGBT module, part number FII30-12E, is a high-performance NPT IGBT half-bridge array designed for demanding applications. Featuring a robust 1200V Collector-Emitter Breakdown Voltage and a continuous 33A Collector Current rating, this component delivers 150W of power dissipation. The low Vce(on) of 2.9V at 15V Vge and 20A Ic ensures efficient operation. With an input capacitance of 1.2 nF at 25V, it is suitable for high-frequency switching. The device operates across a wide temperature range of -55°C to 150°C and is housed in an ISOPLUS i4-PAC™ package for enhanced thermal management. This IGBT array is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 |
| Mounting Type | Through Hole |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 20A |
| NTC Thermistor | No |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| IGBT Type | NPT |
| Current - Collector (Ic) (Max) | 33 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 150 W |
| Current - Collector Cutoff (Max) | 200 µA |
| Input Capacitance (Cies) @ Vce | 1.2 nF @ 25 V |
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