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FII24N170AH1

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FII24N170AH1

IGBT H BRIDGE 1700V 18A I4PAK5

Manufacturer: IXYS

Categories: IGBT Arrays

Quality Control: Learn More

The IXYS FII24N170AH1 is an NPT IGBT half-bridge array designed for high-voltage applications. This through-hole component features a 1700V collector-emitter breakdown voltage and a continuous collector current rating of 18A, with a maximum power dissipation of 140W. The device exhibits a Vce(on) of 6V at 15V Vge and 16A Ic, and an input capacitance (Cies) of 2.4 nF at 25V. Packaged in an isolated i4-Pac™-4, it operates across a temperature range of -55°C to 150°C. This IGBT array is suitable for use in industrial power supplies, motor drives, and renewable energy systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / Casei4-Pac™-4, Isolated
Mounting TypeThrough Hole
InputStandard
ConfigurationHalf Bridge
Operating Temperature-55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic6V @ 15V, 16A
NTC ThermistorNo
Supplier Device PackageISOPLUS i4-PAC™
IGBT TypeNPT
Current - Collector (Ic) (Max)18 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Power - Max140 W
Current - Collector Cutoff (Max)100 µA
Input Capacitance (Cies) @ Vce2.4 nF @ 25 V

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