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IXS839S1T/R

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IXS839S1T/R

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: IXYS

Categories: Gate Drivers

Quality Control: Learn More

The IXYS IXS839S1T-R is a half-bridge gate driver IC featuring a non-inverting input and a synchronous channel type. This component is designed for driving N-channel MOSFETs in a half-bridge configuration. Key specifications include a 2A source and 4A sink peak output current, with a high-side voltage capability of up to 24V using a bootstrap circuit. The logic voltage threshold for input is defined by VIL at 0.8V and VIH at 2V. This device operates from a supply voltage range of 4.5V to 5.5V. The typical rise and fall times are 20ns and 15ns, respectively, facilitating efficient switching. Packaged in an 8-SOIC (0.154", 3.90mm Width) format, the IXS839S1T-R is designed for surface mounting and is supplied on tape and reel. Its operating temperature range is -40°C to 125°C (TJ). This component is suitable for applications in power conversion and motor control systems where efficient switching of power semiconductors is critical.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TJ)
Voltage - Supply4.5V ~ 5.5V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)24 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)20ns, 15ns
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2V
Current - Peak Output (Source, Sink)2A, 4A
ProgrammableNot Verified

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