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IXDN509SIAT/R

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IXDN509SIAT/R

IC GATE DRVR LOW-SIDE 8SOIC

Manufacturer: IXYS

Categories: Gate Drivers

Quality Control: Learn More

The IXYS IXDN509SIAT-R is a high-speed, low-side gate driver designed for driving power MOSFETs and IGBTs. This single-channel device features a non-inverting input and offers robust performance with a peak output current of 9A source and sink. It operates over a wide supply voltage range of 4.5V to 30V, making it suitable for various power conversion applications. The IXDN509SIAT-R supports IGBT and N-Channel/P-Channel MOSFET gate types with typical rise and fall times of 25ns and 23ns, respectively. Its 8-SOIC package facilitates surface mounting and is supplied on tape and reel for automated assembly. This component is commonly utilized in industrial automation, power supplies, and electric vehicle charging systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Voltage - Supply4.5V ~ 30V
Input TypeNon-Inverting
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)25ns, 23ns
Channel TypeSingle
Driven ConfigurationLow-Side
Number of Drivers1
Gate TypeIGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.4V
Current - Peak Output (Source, Sink)9A, 9A
ProgrammableNot Verified

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