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IXDE509SIAT/R

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IXDE509SIAT/R

IC GATE DRVR LOW-SIDE 8SOIC

Manufacturer: IXYS

Categories: Gate Drivers

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The IXYS IXDE509SIAT-R is a high-current, low-side gate driver designed for demanding applications. This single-channel driver, housed in an 8-SOIC package, delivers a peak output current of 9A source and 9A sink, facilitating rapid switching of power devices. Its inverting input logic simplifies control, with a VIL of 0.8V and VIH of 2.4V. The device supports gate drive for IGBTs and both N-channel and P-channel MOSFETs, offering broad compatibility. The operating temperature range of -55°C to 150°C ensures reliable performance in harsh environments. Typical rise and fall times of 25ns and 23ns, respectively, enable efficient power conversion. The IXDE509SIAT-R is commonly utilized in industrial motor control, power supplies, and electric vehicle powertrains.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Voltage - Supply4.5V ~ 30V
Input TypeInverting
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)25ns, 23ns
Channel TypeSingle
Driven ConfigurationLow-Side
Number of Drivers1
Gate TypeIGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.4V
Current - Peak Output (Source, Sink)9A, 9A
ProgrammableNot Verified

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