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IXDE504SIAT/R

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IXDE504SIAT/R

IC GATE DRVR LOW-SIDE 8SOIC

Manufacturer: IXYS

Categories: Gate Drivers

Quality Control: Learn More

The IXYS IXDE504SIAT-R is a dual, low-side gate driver IC featuring independent channels. This device offers robust performance with a peak output current of 4A (source and sink) and fast switching characteristics, exhibiting typical rise and fall times of 9ns and 8ns, respectively. Designed for driving IGBTs and N-channel or P-channel MOSFETs, it operates across a wide supply voltage range of 4.5V to 30V. The inverting input logic and a low logic threshold (VIL 0.8V, VIH 3V) ensure compatibility with various control signals. Packaged in an 8-SOIC surface-mount configuration and supplied on tape and reel, this component is suitable for demanding applications in industrial automation, power supplies, and electric vehicle powertrains. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Voltage - Supply4.5V ~ 30V
Input TypeInverting
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)9ns, 8ns
Channel TypeIndependent
Driven ConfigurationLow-Side
Number of Drivers2
Gate TypeIGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 3V
Current - Peak Output (Source, Sink)4A, 4A
ProgrammableNot Verified

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