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IXDD509SIAT/R

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IXDD509SIAT/R

IC GATE DRVR LOW-SIDE 8SOIC

Manufacturer: IXYS

Categories: Gate Drivers

Quality Control: Learn More

The IXYS IXDD509SIAT-R is a single, non-inverting, low-side gate driver IC designed for high-performance switching applications. This component delivers robust performance with a peak output current of 9A (source and sink), enabling efficient driving of IGBTs and N-channel/P-channel MOSFETs. Featuring a wide operating supply voltage range of 4.5V to 30V and low input voltage thresholds (VIL 0.8V, VIH 2.4V), the IXDD509SIAT-R ensures reliable operation across various power system configurations. Its typical rise and fall times of 25ns and 23ns, respectively, facilitate fast switching, critical for optimizing power conversion efficiency. The device is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount configuration, supplied on tape and reel. Its operating temperature range of -55°C to 150°C (TJ) makes it suitable for demanding industrial environments, including power supplies and motor control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Voltage - Supply4.5V ~ 30V
Input TypeNon-Inverting
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)25ns, 23ns
Channel TypeSingle
Driven ConfigurationLow-Side
Number of Drivers1
Gate TypeIGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.4V
Current - Peak Output (Source, Sink)9A, 9A
ProgrammableNot Verified

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