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IXDD504SIAT/R

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IXDD504SIAT/R

IC GATE DRVR LOW-SIDE 8SOIC

Manufacturer: IXYS

Categories: Gate Drivers

Quality Control: Learn More

IXYS IXDD504SIAT-R is a dual, low-side gate driver IC designed for driving N-channel MOSFETs and IGBTs. This non-inverting driver features independent channels, each capable of sourcing and sinking 4A peak output current, enabling rapid switching required in high-efficiency power conversion. With a wide supply voltage range of 4.5V to 30V and low logic thresholds (0.8V VIL, 3V VIH), it integrates seamlessly with various microcontroller and DSP platforms. The device exhibits typical rise and fall times of 9ns and 8ns respectively, ensuring minimal switching losses. Packaged in an 8-SOIC-EP with an exposed pad for enhanced thermal performance, the IXDD504SIAT-R is suitable for demanding applications in industrial power supplies, motor control, and automotive electronics. It operates reliably across an extended temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width) Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Voltage - Supply4.5V ~ 30V
Input TypeNon-Inverting
Supplier Device Package8-SOIC-EP
Rise / Fall Time (Typ)9ns, 8ns
Channel TypeIndependent
Driven ConfigurationLow-Side
Number of Drivers2
Gate TypeIGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 3V
Current - Peak Output (Source, Sink)4A, 4A
ProgrammableNot Verified

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