IXD611S1T/R
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: IXYS
Categories: Gate Drivers
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The IXYS IXD611S1T-R is a high-performance, non-inverting half-bridge gate driver IC housed in an 8-SOIC package. This component features independent drivers capable of sourcing and sinking 600mA peak output current, with typical rise and fall times of 28ns and 18ns, respectively. Designed for driving IGBTs and N-Channel MOSFETs, it supports a high-side bootstrap voltage of up to 600V. The device operates from a supply voltage range of 10V to 35V, with logic voltage thresholds of 2.4V (VIL) and 2.7V (VIH). Its surface mount configuration and 8-SOIC (0.154", 3.90mm width) package are suitable for demanding applications in industrial power supplies, motor control, and electric vehicle powertrains. The IXD611S1T-R operates across an extended temperature range of -40°C to 150°C (TJ) and is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Voltage - Supply | 10V ~ 35V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Supplier Device Package | 8-SOIC |
| Rise / Fall Time (Typ) | 28ns, 18ns |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 2.4V, 2.7V |
| Current - Peak Output (Source, Sink) | 600mA, 600mA |
| Programmable | Not Verified |
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