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IX6R11S6T/R

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IX6R11S6T/R

IC GATE DRVR HALF-BRIDGE 18SOIC

Manufacturer: IXYS

Categories: Gate Drivers

Quality Control: Learn More

The IXYS IX6R11S6T-R is a half-bridge gate driver IC designed for high-power applications. This component features independent channels with a peak output current of 6A source and sink, enabling efficient driving of IGBT and N-Channel MOSFET power switches. The non-inverting input configuration simplifies control logic. Key specifications include a high-side voltage capability up to 600V, requiring a bootstrap capacitor for operation. The device operates from a supply voltage range of 10V to 35V and is housed in an 18-SOIC package for surface mounting. Typical rise and fall times are 25ns and 17ns, respectively, facilitating fast switching transitions. The IX6R11S6T-R is suitable for use in power supplies, motor control, and industrial automation systems. It operates within an ambient temperature range of -40°C to 125°C. This device is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case18-SOIC (0.295"", 7.50mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TA)
Voltage - Supply10V ~ 35V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package18-SOIC
Rise / Fall Time (Typ)25ns, 17ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH6V, 9.6V
Current - Peak Output (Source, Sink)6A, 6A
ProgrammableNot Verified

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