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IX4R11S3T/R

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IX4R11S3T/R

IC GATE DRVR HALF-BRIDGE 16SOIC

Manufacturer: IXYS

Categories: Gate Drivers

Quality Control: Learn More

The IXYS IX4R11S3T-R is a high-performance half-bridge gate driver IC designed for driving IGBTs and N-Channel MOSFETs. This independent dual-channel device features a non-inverting input and delivers a robust 4A peak output current for both source and sink. Operating within a supply voltage range of 10V to 35V, it supports a high-side voltage of up to 650V, facilitated by its bootstrap capability. The device exhibits typical rise and fall times of 23ns and 22ns respectively, ensuring efficient switching. Packaged in a 16-SOIC (0.295" width) on tape and reel, it is suitable for surface-mount applications. The IX4R11S3T-R finds utility in power conversion, industrial motor control, and electric vehicle powertrains, operating across a junction temperature range of -40°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case16-SOIC (0.295"", 7.50mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply10V ~ 35V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)650 V
Supplier Device Package16-SOIC
Rise / Fall Time (Typ)23ns, 22ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH6V, 7V
Current - Peak Output (Source, Sink)4A, 4A
ProgrammableNot Verified

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