IX2R11M6T/R
IC GATE DRVR HALF-BRIDGE 16MLPManufacturer: IXYS
Categories: Gate Drivers
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The IXYS IX2R11M6T-R is a high-performance half-bridge gate driver IC, designed for efficient control of IGBT and N-Channel MOSFET power transistors. This device features independent high-side and low-side drivers, each capable of sourcing and sinking 2A peak output current. It supports a high-side bootstrap voltage up to 500V, enabling operation with a wide supply voltage range of 10V to 35V. The non-inverting input logic requires a 6V to 9.5V threshold. With typical rise and fall times of 8ns and 7ns respectively, the IX2R11M6T-R offers fast switching characteristics crucial for applications in electric vehicles, industrial motor drives, and power supplies. This component is housed in a 16-MLP (7x6) package with an exposed pad for enhanced thermal management and is supplied on tape and reel. It operates reliably across an extended temperature range of -40°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 16-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Voltage - Supply | 10V ~ 35V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 500 V |
| Supplier Device Package | 16-MLP (7x6) |
| Rise / Fall Time (Typ) | 8ns, 7ns |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 6V, 9.5V |
| Current - Peak Output (Source, Sink) | 2A, 2A |
| Programmable | Not Verified |
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