VWM200-01P
MOSFET 6N-CH 100V 210A V2-PAKManufacturer: IXYS
Categories: FET, MOSFET Arrays
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The IXYS VWM200-01P is a 6-channel N-channel MOSFET array with a Vdss rating of 100V and continuous drain current capability of 210A at 25°C. This component features a low Rds(on) of 5.2mOhm at 100A and 10V, and a typical gate charge of 430nC at 10V. The VWM200-01P is housed in a V2-PAK package designed for chassis mounting. Its configuration as a 3-phase bridge makes it suitable for applications in industrial motor control, power supplies, and electric vehicle powertrains. The operating temperature range is -40°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | V2-PAK |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 210A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 100A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 430nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Supplier Device Package | V2-PAK |
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