VMM90-09F
MOSFET 2N-CH 900V 85A Y3-LIManufacturer: IXYS
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The IXYS HiPerFET™ VMM90-09F is a dual N-channel MOSFET array designed for high-voltage applications. Featuring a Drain-to-Source Voltage (Vdss) of 900V and a continuous drain current (Id) of 85A at 25°C, this component offers robust performance. The MOSFET array boasts a low on-resistance of 76mOhm at 65A and 10V, contributing to efficient power delivery. Key electrical parameters include a gate charge (Qg) of 960nC at 10V and a threshold voltage (Vgs(th)) of 5V at 30mA. The device is presented in a Y3-Li package for chassis mounting, ensuring effective thermal management. Its operating temperature range spans from -40°C to 150°C. This MOSFET array is suitable for demanding applications within the industrial and power electronics sectors.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | Y3-Li |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 85A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 76mOhm @ 65A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 960nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 30mA |
| Supplier Device Package | Y3-Li |
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