VMM650-01F
MOSFET 2N-CH 100V 680A Y3-LIManufacturer: IXYS
Categories: FET, MOSFET Arrays
Quality Control: Learn More
IXYS HiPerFET™ VMM650-01F is a dual N-channel MOSFET array designed for high-power applications. This chassis mount component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 680A at 25°C. The on-resistance (Rds On) is specified at a low 2.2mOhm when conducting 500A with a 10V gate-source voltage. With a gate charge (Qg) of 1440nC maximum at 10V, this MOSFET array is suitable for demanding power switching and conversion circuits. Its robust construction and operating temperature range of -40°C to 150°C make it ideal for use in industrial power supplies, electric vehicle powertrains, and high-current motor control systems. The Y3-Li package provides efficient heat dissipation for continuous operation under heavy loads.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | Y3-Li |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 680A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 500A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1440nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 30mA |
| Supplier Device Package | Y3-Li |
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