VMM300-03F
MOSFET 2N-CH 300V 290A Y3-DCBManufacturer: IXYS
Categories: FET, MOSFET Arrays
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IXYS HiPerFET™ VMM300-03F is a dual N-channel MOSFET array designed for high-power applications. This component features a continuous drain current rating of 290A at 25°C and a drain-to-source voltage (Vdss) of 300V. The low on-resistance of 8.6mOhm at 145A and 10V (Rds On) combined with a maximum power dissipation of 1500W makes it suitable for demanding power conversion and control circuits. Key parameters include a gate charge (Qg) of 1440nC at 10V and input capacitance (Ciss) of 40000pF at 25V. The device is housed in a Y3-DCB package for chassis mounting, facilitating efficient thermal management. Operating temperature ranges from -40°C to 150°C (TJ). This MOSFET array is utilized in industries such as renewable energy, industrial motor control, and power supply systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | Y3-DCB |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1500W |
| Drain to Source Voltage (Vdss) | 300V |
| Current - Continuous Drain (Id) @ 25°C | 290A |
| Input Capacitance (Ciss) (Max) @ Vds | 40000pF @ 25V |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 145A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1440nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 30mA |
| Supplier Device Package | Y3-DCB |
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