VBH40-05B
MOSFET 4N-CH 500V 40A V2-PAKManufacturer: IXYS
Categories: FET, MOSFET Arrays
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The IXYS HiPerFET™ VBH40-05B is a high-performance MOSFET array featuring four N-channel enhancement mode transistors configured as a full bridge. This component offers a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 40A at 25°C. The Rds(on) is specified at a maximum of 116mOhm at 30A and 10V, supported by a gate charge (Qg) of 270nC at 10V. The device utilizes Metal Oxide technology and is housed in a V2-PAK package for chassis mounting. Operating temperature ranges from -40°C to 150°C (TJ). This MOSFET array is suitable for applications in high-voltage power conversion, motor drives, and industrial power supplies.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | V2-PAK |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 40A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 116mOhm @ 30A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 270nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | V2-PAK |
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