MTI85W100GC-SMD
MOSFET 6N-CH 100V 120A ISOPLUSManufacturer: IXYS
Categories: FET, MOSFET Arrays
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IXYS MTI85W100GC-SMD is a 6-channel N-channel MOSFET array designed for high-power applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 120A per channel at 25°C (Tc). The low on-resistance of 4mOhm at 80A and 10V (Rds On) is critical for minimizing conduction losses. With a gate charge (Qg) of 88nC at 10V, it offers efficient switching characteristics.
The MTI85W100GC-SMD is housed in an ISOPLUS-DIL™ package, a 17-SMD gull-wing surface mount configuration, facilitating integration into dense board layouts. Its robust construction allows operation across a wide temperature range from -55°C to 175°C (TJ). This MOSFET array is particularly suited for applications in industrial motor control, power supplies, and electric vehicle powertrains where high current handling and efficient switching are paramount. The 3-phase bridge configuration simplifies complex power designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 76 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 17-SMD, Gull Wing |
| Mounting Type | Surface Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 80A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 88nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Supplier Device Package | ISOPLUS-DIL™ |
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