MTI145WX100GD-SMD
MOSFET 6N-CH 100V 190A ISOPLUSManufacturer: IXYS
Categories: FET, MOSFET Arrays
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The IXYS MTI145WX100GD-SMD is a 100V, 190A (Tc) N-Channel MOSFET array designed for demanding power applications. This component, packaged in an ISOPLUS-DIL™ for surface mounting, features a 3-phase bridge configuration. Key electrical characteristics include a low on-resistance of 2.2mOhm @ 100A, 10V and a gate charge of 155nC @ 10V. Input capacitance (Ciss) is specified at 11100pF @ 50V. The device operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET array is suitable for use in industrial power supplies, motor drives, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 76 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS-DIL™ |
| Mounting Type | Surface Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 190A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 11100pF @ 50V |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 100A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 155nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.5V @ 275µA |
| Supplier Device Package | ISOPLUS-DIL™ |
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