MMIX2F60N50P3
MOSFET 2N-CH 500V 30A 24SMPDManufacturer: IXYS
Categories: FET, MOSFET Arrays
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The IXYS HiPerFET™, Polar3™ MMIX2F60N50P3 is a 500V, 2 N-channel MOSFET array designed for high-efficiency power switching applications. This device features a continuous drain current (Id) of 30A at 25°C (Tc) and a maximum power dissipation of 320W. With a low Rds On of 110mOhm at 30A and 10V, it minimizes conduction losses. The MMIX2F60N50P3 exhibits a gate charge (Qg) of 96nC at 10V and input capacitance (Ciss) of 6250pF at 25V. Packaged in a 24-SMPD surface mount module, it is suitable for demanding thermal management. Typical industry applications include power supplies, motor control, and industrial automation. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 24-SMD Module, 9 Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 320W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 6250pF @ 25V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 30A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | 24-SMPD |
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