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MCB30P1200LB-TRR

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MCB30P1200LB-TRR

SIC 2N-CH 1200V 9SMPD

Manufacturer: IXYS

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The IXYS MCB30P1200LB-TRR is a Silicon Carbide (SiC) 2-N-Channel MOSFET array with a Drain-to-Source Voltage (Vdss) of 1200V (1.2kV). This component is housed in a 9-SMPD-B surface mount package, supplied on tape and reel. Its dual N-channel configuration makes it suitable for applications requiring high voltage switching and power efficiency. This device finds utility in sectors such as industrial power supplies, electric vehicle charging, and renewable energy systems where robust performance under demanding conditions is paramount.

Additional Information

Series: MCB30P1200LBRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case9-PowerSMD
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-
TechnologySilicon Carbide (SiC)
Power - Max-
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C-
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs-
Gate Charge (Qg) (Max) @ Vgs-
FET Feature-
Vgs(th) (Max) @ Id-
Supplier Device Package9-SMPD-B

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